PART |
Description |
Maker |
7MBR75SD060 |
PIM/Built-in converter with thyristor and brake (600V / 75A / PIM)
|
FUJI[Fuji Electric]
|
RN2112FT RN2113FT |
IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL |
8A, 600V Stealth Single Diode 8A, 600V Stealth Diode 8A, 600V Stealth⑩ Diode 8A, 600V StealthDiode
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
CFRM105-G |
Fast Recovery Rectifiers, V-RRM=600V, V-R=600V, I-O=1A
|
Comchip Technology
|
FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET 600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 600V N-Channel B-FET / Substitute of SSU2N60A 600V N-Channel B-FET / Substitute of SSR2N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRG4PC30U IRG4PC30UPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
IRG4BC30K-S IRG4BC30KS IRG4BC30K-STRR |
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
IRG4PC50W IRG4PC50WPBF |
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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